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NESG2101M05-A

Description:
TRANS NPN 2GHZ M05
Manufacturer:
CEL
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NESG2101M05-A

Product Information

Category
RF Transistors (BJT)
Packaging
Bulk
Series
-
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
5V
Frequency - Transition
17GHz
Noise Figure (dB Typ @ f)
0.6dB ~ 1.2dB @ 1GHz ~ 2GHz
Gain
11dB ~ 19dB
Power - Max
500mW
DC Current Gain (hFE) (Min) @ Ic, Vce
130 @ 15mA, 2V
Current - Collector (Ic) (Max)
100mA
Mounting Type
Surface Mount
Package / Case
SOT-343F
Supplier Device Package
M05

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