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RF Transistors (BJT)
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NE664M04-A
NE664M04-A
Description:
TRANSISTOR NPN 1.8GHZ M04
Manufacturer:
CEL
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NE664M04-A
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NE664M04-A
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Product Information
Category
RF Transistors (BJT)
Packaging
Bulk
Series
-
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
5V
Frequency - Transition
20GHz
Noise Figure (dB Typ @ f)
-
Gain
12dB
Power - Max
735mW
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 100mA, 3V
Current - Collector (Ic) (Max)
500mA
Mounting Type
Surface Mount
Package / Case
SOT-343F
Supplier Device Package
M04
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