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Discrete Semiconductor Products
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Transistors (BJT) - Arrays, Pre-Biased
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EMG11T2R
EMG11T2R
Description:
TRANS PREBIAS DUAL NPN EMT5
Manufacturer:
Rohm Semiconductor
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EMG11T2R
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EMG11T2R
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Product Information
Category
Transistors (BJT) - Arrays, Pre-Biased
Packaging
Cut Tape (CT)
Series
-
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1) (Ohms)
2.2k
Resistor - Emitter Base (R2) (Ohms)
47k
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
250MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
6-SMD (5 Leads), Flat Lead
Supplier Device Package
EMT5
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