HN3C10FUTE85LF
- Description：
- TRANSISTOR NPN US6
- Manufacturer：
- Toshiba Semiconductor and Storage
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Product Information
- Category
- RF Transistors (BJT)
- Packaging
- Tape & Reel (TR)
- Series
- -
- Transistor Type
- 2 NPN (Dual)
- Voltage - Collector Emitter Breakdown (Max)
- 12V
- Frequency - Transition
- 7GHz
- Noise Figure (dB Typ @ f)
- 1.1dB @ 1GHz
- Gain
- 11.5dB
- Power - Max
- 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 80 @ 20mA, 10V
- Current - Collector (Ic) (Max)
- 80mA
- Mounting Type
- Surface Mount
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Supplier Device Package
- US6
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