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RN1962TE85LF

Description:
TRANSISTOR NPN US6
Manufacturer:
Toshiba Semiconductor and Storage
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RN1962TE85LF

Product Information

Category
Transistors (BJT) - Arrays, Pre-Biased
Packaging
Cut Tape (CT)
Series
-
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1) (Ohms)
10k
Resistor - Emitter Base (R2) (Ohms)
10k
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
250MHz
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
US6

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