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Discrete Semiconductor Products
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Transistors (BJT) - Arrays, Pre-Biased
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EMD6T2R
EMD6T2R
Description:
TRANS PREBIAS NPN/PNP EMT6
Manufacturer:
Rohm Semiconductor
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EMD6T2R
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EMD6T2R
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Product Information
Category
Transistors (BJT) - Arrays, Pre-Biased
Packaging
Cut Tape (CT)
Series
-
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1) (Ohms)
4.7k
Resistor - Emitter Base (R2) (Ohms)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
-
Frequency - Transition
250MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
EMT6
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