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GT60N321(Q)

Description:
IGBT 1000V 60A 170W TO3P LH
Manufacturer:
Toshiba Semiconductor and Storage
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GT60N321(Q)

Product Information

Category
IGBTs - Single
Packaging
Tube
Series
-
IGBT Type
-
Voltage - Collector Emitter Breakdown (Max)
1000V
Current - Collector (Ic) (Max)
60A
Current - Collector Pulsed (Icm)
120A
Vce(on) (Max) @ Vge, Ic
2.8V @ 15V, 60A
Power - Max
170W
Switching Energy
-
Input Type
Standard
Gate Charge
-
Td (on/off) @ 25°C
330ns/700ns
Test Condition
-
Reverse Recovery Time (trr)
2.5µs
Package / Case
TO-3PL
Mounting Type
Through Hole
Supplier Device Package
TO-3P(LH)

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