GT60M303(Q)
- Description：
- IGBT 900V 60A 170W TO3P LH
- Manufacturer：
- Toshiba Semiconductor and Storage
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Product Information
- Category
- IGBTs - Single
- Packaging
- Tube
- Series
- -
- IGBT Type
- -
- Voltage - Collector Emitter Breakdown (Max)
- 900V
- Current - Collector (Ic) (Max)
- 60A
- Current - Collector Pulsed (Icm)
- 120A
- Vce(on) (Max) @ Vge, Ic
- 2.7V @ 15V, 60A
- Power - Max
- 170W
- Switching Energy
- -
- Input Type
- Standard
- Gate Charge
- -
- Td (on/off) @ 25°C
- 460ns/600ns
- Test Condition
- -
- Reverse Recovery Time (trr)
- 2.5µs
- Package / Case
- TO-3PL
- Mounting Type
- Through Hole
- Supplier Device Package
- TO-3P(LH)
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