FQE10N20LCTU
- Description：
- MOSFET N-CH 200V 4A TO-126
- Manufacturer：
- Fairchild Semiconductor
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Product Information
- Category
- FETs - Single
- Packaging
- Tube
- Series
- QFET®
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 200V
- Current - Continuous Drain (Id) @ 25°C
- 4A (Tc)
- Rds On (Max) @ Id, Vgs
- 360 mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id
- 2V @ 250µA
- Gate Charge (Qg) @ Vgs
- 19nC @ 5V
- Input Capacitance (Ciss) @ Vds
- 490pF @ 25V
- Power - Max
- 12.8W
- Mounting Type
- Through Hole
- Package / Case
- TO-225AA, TO-126-3
- Supplier Device Package
- TO-126
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