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IRFHM830DTR2PBF

Description:
MOSFET N-CH 30V 20A PQFN
Manufacturer:
International Rectifier
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IRFHM830DTR2PBF

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
HEXFET®
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
20A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs
4.3 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.35V @ 50µA
Gate Charge (Qg) @ Vgs
27nC @ 10V
Input Capacitance (Ciss) @ Vds
1797pF @ 25V
Power - Max
2.8W
Mounting Type
Surface Mount
Package / Case
8-VQFN Exposed Pad
Supplier Device Package
PQFN (3x3)

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