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SI4688DY-T1-GE3

Description:
MOSFET N-CH 30V 8.9A 8-SOIC
Manufacturer:
Vishay Siliconix
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SI4688DY-T1-GE3

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
-
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
8.9A (Ta)
Rds On (Max) @ Id, Vgs
11 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) @ Vgs
38nC @ 10V
Input Capacitance (Ciss) @ Vds
1580pF @ 15V
Power - Max
1.4W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC N

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