NDS356P
- Description：
- MOSFET P-CH 20V 1.1A SSOT-3
- Manufacturer：
- Fairchild Semiconductor
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- -
- FET Type
- MOSFET P-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 20V
- Current - Continuous Drain (Id) @ 25°C
- 1.1A (Ta)
- Rds On (Max) @ Id, Vgs
- 210 mOhm @ 1.3A, 10V
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Gate Charge (Qg) @ Vgs
- 5nC @ 5V
- Input Capacitance (Ciss) @ Vds
- 180pF @ 10V
- Power - Max
- 460mW
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Supplier Device Package
- 3-SSOT
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