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NDS356P

Description:
MOSFET P-CH 20V 1.1A SSOT-3
Manufacturer:
Fairchild Semiconductor
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NDS356P

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
-
FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
1.1A (Ta)
Rds On (Max) @ Id, Vgs
210 mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) @ Vgs
5nC @ 5V
Input Capacitance (Ciss) @ Vds
180pF @ 10V
Power - Max
460mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
3-SSOT

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