PMN55LN,135
- Description：
- MOSFET N-CH 20V 4.1A 6TSOP
- Manufacturer：
- NXP Semiconductors
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- TrenchMOS™
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 20V
- Current - Continuous Drain (Id) @ 25°C
- 4.1A
- Rds On (Max) @ Id, Vgs
- 65 mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id
- 2V @ 1mA
- Gate Charge (Qg) @ Vgs
- 13.1nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 500pF @ 20V
- Power - Max
- 1.75W
- Mounting Type
- Surface Mount
- Package / Case
- SC-74, SOT-457
- Supplier Device Package
- 6-TSOP
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