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SI5499DC-T1-E3

Description:
MOSFET P-CH 8V 6A 1206-8
Manufacturer:
Vishay Siliconix
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SI5499DC-T1-E3

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
TrenchFET®
FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
8V
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Rds On (Max) @ Id, Vgs
36 mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id
800mV @ 250µA
Gate Charge (Qg) @ Vgs
35nC @ 8V
Input Capacitance (Ciss) @ Vds
1290pF @ 4V
Power - Max
6.2W
Mounting Type
Surface Mount
Package / Case
8-SMD, Flat Lead
Supplier Device Package
1206-8 ChipFET™

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