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SI5406DC-T1-E3

Description:
MOSFET N-CH 12V 6.9A 1206-8
Manufacturer:
Vishay Siliconix
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SI5406DC-T1-E3

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
TrenchFET®
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
12V
Current - Continuous Drain (Id) @ 25°C
6.9A (Ta)
Rds On (Max) @ Id, Vgs
20 mOhm @ 6.9A, 4.5V
Vgs(th) (Max) @ Id
600mV @ 1.2mA
Gate Charge (Qg) @ Vgs
20nC @ 4.5V
Input Capacitance (Ciss) @ Vds
-
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
8-SMD, Flat Lead
Supplier Device Package
1206-8 ChipFET™

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