SI3812DV-T1-E3
- Description：
- MOSFET N-CH 20V 2A 6-TSOP
- Manufacturer：
- Vishay Siliconix
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- -
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Diode (Isolated)
- Drain to Source Voltage (Vdss)
- 20V
- Current - Continuous Drain (Id) @ 25°C
- 2A (Ta)
- Rds On (Max) @ Id, Vgs
- 125 mOhm @ 2.4A, 4.5V
- Vgs(th) (Max) @ Id
- 600mV @ 250µA
- Gate Charge (Qg) @ Vgs
- 4nC @ 4.5V
- Input Capacitance (Ciss) @ Vds
- -
- Power - Max
- 830mW
- Mounting Type
- Surface Mount
- Package / Case
- 6-TSOP (0.065", 1.65mm Width)
- Supplier Device Package
- 6-TSOP
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