SI3459DV-T1-E3
- Description：
- MOSFET P-CH 60V 2.2A 6-TSOP
- Manufacturer：
- Vishay Siliconix
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- TrenchFET®
- FET Type
- MOSFET P-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 60V
- Current - Continuous Drain (Id) @ 25°C
- 2.2A (Tc)
- Rds On (Max) @ Id, Vgs
- 220 mOhm @ 2.2A, 10V
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Gate Charge (Qg) @ Vgs
- 14nC @ 10V
- Input Capacitance (Ciss) @ Vds
- -
- Power - Max
- 2W
- Mounting Type
- Surface Mount
- Package / Case
- 6-TSOP (0.065", 1.65mm Width)
- Supplier Device Package
- 6-TSOP
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