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SI2308DS-T1-E3

Description:
MOSFET N-CH 60V 2A SOT23-3
Manufacturer:
Vishay Siliconix
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SI2308DS-T1-E3

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
TrenchFET®
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
2A (Ta)
Rds On (Max) @ Id, Vgs
160 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) @ Vgs
10nC @ 10V
Input Capacitance (Ciss) @ Vds
240pF @ 25V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3 (TO-236)

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