SI1070X-T1-E3
- Description：
- MOSFET N-CH 30V 1.2A SOT563F
- Manufacturer：
- Vishay Siliconix
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- TrenchFET®
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate, 2.5V Drive
- Drain to Source Voltage (Vdss)
- 30V
- Current - Continuous Drain (Id) @ 25°C
- 1.2A (Ta)
- Rds On (Max) @ Id, Vgs
- 99 mOhm @ 1.2A, 4.5V
- Vgs(th) (Max) @ Id
- 1.55V @ 250µA
- Gate Charge (Qg) @ Vgs
- 8.3nC @ 5V
- Input Capacitance (Ciss) @ Vds
- 385pF @ 15V
- Power - Max
- 236mW
- Mounting Type
- Surface Mount
- Package / Case
- SOT-563, SOT-666
- Supplier Device Package
- SC-89-6
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