PHD16N03T,118
- Description：
- MOSFET N-CH 30V 13.1A DPAK
- Manufacturer：
- NXP Semiconductors
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Product Information
- Category
- FETs - Single
- Packaging
- Tape & Reel (TR)
- Series
- TrenchMOS™
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Standard
- Drain to Source Voltage (Vdss)
- 30V
- Current - Continuous Drain (Id) @ 25°C
- 13.1A (Tc)
- Rds On (Max) @ Id, Vgs
- 100 mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 1mA
- Gate Charge (Qg) @ Vgs
- 5.2nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 180pF @ 30V
- Power - Max
- 32.6W
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package
- DPAK
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