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PSMN040-200W,127

Description:
MOSFET N-CH 200V 50A SOT429
Manufacturer:
NXP Semiconductors
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PSMN040-200W,127

Product Information

Category
FETs - Single
Packaging
Tube
Series
TrenchMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
200V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Rds On (Max) @ Id, Vgs
40 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) @ Vgs
183nC @ 10V
Input Capacitance (Ciss) @ Vds
9530pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247-3

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