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PHM30NQ10T,518

Description:
MOSFET N-CH 100V 37.6A 8HVSON
Manufacturer:
NXP Semiconductors
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PHM30NQ10T,518

Product Information

Category
FETs - Single
Packaging
Tape & Reel (TR)
Series
TrenchMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
37.6A (Tc)
Rds On (Max) @ Id, Vgs
20 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) @ Vgs
53.7nC @ 10V
Input Capacitance (Ciss) @ Vds
3600pF @ 25V
Power - Max
62.5W
Mounting Type
Surface Mount
Package / Case
8-VDFN Exposed Pad
Supplier Device Package
8-HVSON (6x5)

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