PHD22NQ20T,118
- Description：
- MOSFET N-CH 200V 21.1A DPAK
- Manufacturer：
- NXP Semiconductors
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Product Information
- Category
- FETs - Single
- Packaging
- Tape & Reel (TR)
- Series
- TrenchMOS™
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 200V
- Current - Continuous Drain (Id) @ 25°C
- 21.1A (Tc)
- Rds On (Max) @ Id, Vgs
- 120 mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 1mA
- Gate Charge (Qg) @ Vgs
- 30.8nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 1380pF @ 25V
- Power - Max
- 150W
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package
- DPAK
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