NIF9N05CLT1G
- Description：
- MOSFET N-CH 59V 2.6A SOT223
- Manufacturer：
- ON Semiconductor
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- -
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 59V
- Current - Continuous Drain (Id) @ 25°C
- 2.6A (Ta)
- Rds On (Max) @ Id, Vgs
- 125 mOhm @ 2.6A, 10V
- Vgs(th) (Max) @ Id
- 2.5V @ 100µA
- Gate Charge (Qg) @ Vgs
- 7nC @ 4.5V
- Input Capacitance (Ciss) @ Vds
- 250pF @ 35V
- Power - Max
- 1.69W
- Mounting Type
- Surface Mount
- Package / Case
- TO-261-4, TO-261AA
- Supplier Device Package
- SOT-223
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