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FETs - Single
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IRC640PBF
IRC640PBF
Description:
MOSFET N-CH 200V 18A TO-220-5
Manufacturer:
Vishay Siliconix
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IRC640PBF
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IRC640PBF
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Product Information
Category
FETs - Single
Packaging
Tube
Series
HEXFET®
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Current Sensing
Drain to Source Voltage (Vdss)
200V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Rds On (Max) @ Id, Vgs
180 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) @ Vgs
70nC @ 10V
Input Capacitance (Ciss) @ Vds
1300pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-5
Supplier Device Package
TO-220-5
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