BSZ180P03NS3 G
- Description：
- MOSFET P-CH 30V 39.6A TSDSON-8
- Manufacturer：
- Infineon Technologies
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Product Information
- Category
- FETs - Single
- Packaging
- Tape & Reel (TR)
- Series
- OptiMOS™
- FET Type
- MOSFET P-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 30V
- Current - Continuous Drain (Id) @ 25°C
- 8A (Ta), 39.6A (Tc)
- Rds On (Max) @ Id, Vgs
- 18 mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id
- 1.9V @ 48µA
- Gate Charge (Qg) @ Vgs
- 30nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 2220pF @ 15V
- Power - Max
- 2.1W
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Supplier Device Package
- -
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