IRF6602
- Description：
- MOSFET N-CH 20V 11A DIRECTFET
- Manufacturer：
- International Rectifier
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- HEXFET®
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 20V
- Current - Continuous Drain (Id) @ 25°C
- 11A (Ta), 48A (Tc)
- Rds On (Max) @ Id, Vgs
- 13 mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id
- 2.3V @ 250µA
- Gate Charge (Qg) @ Vgs
- 18nC @ 4.5V
- Input Capacitance (Ciss) @ Vds
- 1420pF @ 10V
- Power - Max
- 2.3W
- Mounting Type
- Surface Mount
- Package / Case
- DirectFET™ Isometric MQ
- Supplier Device Package
- DIRECTFET™ MQ
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