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2N6661-2

Description:
MOSFET N-CH 90V 860MA TO-205
Manufacturer:
Vishay Siliconix
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2N6661-2

Product Information

Category
FETs - Single
Packaging
Tube
Series
-
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
90V
Current - Continuous Drain (Id) @ 25°C
860mA (Tc)
Rds On (Max) @ Id, Vgs
5.3 Ohm @ 300mA, 5V
Vgs(th) (Max) @ Id
2V @ 1mA
Gate Charge (Qg) @ Vgs
-
Input Capacitance (Ciss) @ Vds
50pF @ 25V
Power - Max
725mW
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Supplier Device Package
TO-39

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