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GA10JT12-247

Description:
TRANS SJT 1.2KV 10A
Manufacturer:
GeneSiC Semiconductor
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GA10JT12-247

Product Information

Category
FETs - Single
Packaging
Tube
Series
-
FET Type
Silicon Carbide, Normally Off
FET Feature
Super Junction
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Rds On (Max) @ Id, Vgs
140 mOhm @ 10A
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) @ Vgs
-
Input Capacitance (Ciss) @ Vds
-
Power - Max
91W
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247AB

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