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STH360N4F6-2

Description:
MOSFET N-CH 40V 180A H2PAK-2
Manufacturer:
STMicroelectronics
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STH360N4F6-2

Product Information

Category
FETs - Single
Packaging
*
Series
DeepGATE™, STripFET™ VI
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
40V
Current - Continuous Drain (Id) @ 25°C
180A (Tc)
Rds On (Max) @ Id, Vgs
1.25 mOhm @ 60A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) @ Vgs
340nC @ 10V
Input Capacitance (Ciss) @ Vds
17930pF @ 25V
Power - Max
300W
Mounting Type
*
Package / Case
*
Supplier Device Package
*

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