IRLI640G
- Description：
- MOSFET N-CH 200V 9.9A TO220FP
- Manufacturer：
- Vishay Siliconix
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Product Information
- Category
- FETs - Single
- Packaging
- Tube
- Series
- -
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 200V
- Current - Continuous Drain (Id) @ 25°C
- 9.9A (Tc)
- Rds On (Max) @ Id, Vgs
- 180 mOhm @ 5.9A, 5V
- Vgs(th) (Max) @ Id
- 2V @ 250µA
- Gate Charge (Qg) @ Vgs
- 66nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 1800pF @ 25V
- Power - Max
- 40W
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Supplier Device Package
- TO-220-3
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