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SQM110N06-04L-GE3

Description:
MOSFET N-CH D-S 60V TO263
Manufacturer:
Vishay Siliconix
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SQM110N06-04L-GE3

Product Information

Category
FETs - Single
Packaging
Tape & Reel (TR)
Series
TrenchFET®
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Rds On (Max) @ Id, Vgs
3.5 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) @ Vgs
276nC @ 10V
Input Capacitance (Ciss) @ Vds
9125pF @ 25V
Power - Max
375W
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
TO-263 (D2Pak)

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