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NTD4960N-1G

Description:
MOSFET N-CH 30V 11.1A IPAK
Manufacturer:
ON Semiconductor
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NTD4960N-1G

Product Information

Category
FETs - Single
Packaging
Tube
Series
-
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
8.9A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs
8 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) @ Vgs
22nC @ 10V
Input Capacitance (Ciss) @ Vds
1300pF @ 15V
Power - Max
1.07W
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
I-Pak

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