SQM200N04-1M1L-GE3
- Description：
- MOSFET N-CH 40V 200A TO-263
- Manufacturer：
- Vishay Siliconix
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Product Information
- Category
- FETs - Single
- Packaging
- Tape & Reel (TR)
- Series
- TrenchFET®
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 40V
- Current - Continuous Drain (Id) @ 25°C
- 200A (Tc)
- Rds On (Max) @ Id, Vgs
- 1.1 mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Gate Charge (Qg) @ Vgs
- 413nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 20655pF @ 25V
- Power - Max
- 375W
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-7, D²Pak (6 Leads + Tab)
- Supplier Device Package
- TO-263-7
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