IRF6641TR1PBF
- Description：
- MOSFET N-CH 200V 4.6A DIRECTFET
- Manufacturer：
- International Rectifier
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- HEXFET®
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Standard
- Drain to Source Voltage (Vdss)
- 200V
- Current - Continuous Drain (Id) @ 25°C
- 4.6A (Ta), 26A (Tc)
- Rds On (Max) @ Id, Vgs
- 59.9 mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id
- 4.9V @ 150µA
- Gate Charge (Qg) @ Vgs
- 48nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 2290pF @ 25V
- Power - Max
- 2.8W
- Mounting Type
- Surface Mount
- Package / Case
- DirectFET™ Isometric MZ
- Supplier Device Package
- DIRECTFET™ MZ
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