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IRLD120

Description:
MOSFET N-CH 100V 1.3A 4-DIP
Manufacturer:
Vishay Siliconix
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IRLD120

Product Information

Category
FETs - Single
Packaging
Tube
Series
-
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
1.3A (Ta)
Rds On (Max) @ Id, Vgs
270 mOhm @ 780mA, 5V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) @ Vgs
12nC @ 5V
Input Capacitance (Ciss) @ Vds
490pF @ 25V
Power - Max
1.3W
Mounting Type
Through Hole
Package / Case
4-DIP (0.300", 7.62mm)
Supplier Device Package
4-DIP, Hexdip, HVMDIP

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