IRF640N
- Description：
- MOSFET N-CH 200V 18A TO-220AB
- Manufacturer：
- International Rectifier
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Product Information
- Category
- FETs - Single
- Packaging
- Tube
- Series
- HEXFET®
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Standard
- Drain to Source Voltage (Vdss)
- 200V
- Current - Continuous Drain (Id) @ 25°C
- 18A (Tc)
- Rds On (Max) @ Id, Vgs
- 150 mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Gate Charge (Qg) @ Vgs
- 67nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 1160pF @ 25V
- Power - Max
- 150W
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Supplier Device Package
- TO-220AB
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