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STB12NM60N-1

Description:
MOSFET N-CH 600V 10A I2PAK
Manufacturer:
STMicroelectronics
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STB12NM60N-1

Product Information

Category
FETs - Single
Packaging
Tube
Series
MDmesh™ II
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
600V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Rds On (Max) @ Id, Vgs
410 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) @ Vgs
30.5nC @ 10V
Input Capacitance (Ciss) @ Vds
960pF @ 50V
Power - Max
90W
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package
I2PAK

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