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BUK9E06-55B,127

Description:
MOSFET N-CH 55V 75A I2PAK
Manufacturer:
NXP Semiconductors
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BUK9E06-55B,127

Product Information

Category
FETs - Single
Packaging
Tube
Series
TrenchMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
55V
Current - Continuous Drain (Id) @ 25°C
75A
Rds On (Max) @ Id, Vgs
5.4 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Gate Charge (Qg) @ Vgs
60nC @ 5V
Input Capacitance (Ciss) @ Vds
7565pF @ 25V
Power - Max
258W
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package
I2PAK

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