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RP1E090XNTCR

Description:
MOSFET N-CH 30V 9A MPT6
Manufacturer:
Rohm Semiconductor
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RP1E090XNTCR

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
-
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
9A (Ta)
Rds On (Max) @ Id, Vgs
17 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) @ Vgs
6.8nC @ 5V
Input Capacitance (Ciss) @ Vds
440pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
6-SMD, Flat Leads
Supplier Device Package
MPT6

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