BSP149 L6327
- Description：
- MOSFET N-CH 200V 660MA SOT-223
- Manufacturer：
- Infineon Technologies
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- SIPMOS®
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Depletion Mode
- Drain to Source Voltage (Vdss)
- 200V
- Current - Continuous Drain (Id) @ 25°C
- 660mA (Ta)
- Rds On (Max) @ Id, Vgs
- 1.8 Ohm @ 660mA, 10V
- Vgs(th) (Max) @ Id
- 1V @ 400µA
- Gate Charge (Qg) @ Vgs
- 14nC @ 5V
- Input Capacitance (Ciss) @ Vds
- 430pF @ 25V
- Power - Max
- 1.8W
- Mounting Type
- Surface Mount
- Package / Case
- TO-261-4, TO-261AA
- Supplier Device Package
- PG-SOT223-4
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