IRFHM830TR2PBF
- Description：
- MOSFET N-CH 30V 21A PQFN
- Manufacturer：
- International Rectifier
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- HEXFET®
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 30V
- Current - Continuous Drain (Id) @ 25°C
- 21A (Ta), 40A (Tc)
- Rds On (Max) @ Id, Vgs
- 3.8 mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id
- 2.35V @ 50µA
- Gate Charge (Qg) @ Vgs
- 31nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 2155pF @ 25V
- Power - Max
- 2.7W
- Mounting Type
- Surface Mount
- Package / Case
- 8-VQFN Exposed Pad
- Supplier Device Package
- PQFN (3x3)
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