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SIHF12N65E-GE3

Description:
MOSFET N-CH 650V 12A TO-220
Manufacturer:
Vishay Siliconix
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SIHF12N65E-GE3

Product Information

Category
FETs - Single
Packaging
Bulk
Series
-
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
650V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Rds On (Max) @ Id, Vgs
380 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) @ Vgs
70nC @ 10V
Input Capacitance (Ciss) @ Vds
1224pF @ 100V
Power - Max
33W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220 Full Pack

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