BS108G
- Description：
- MOSFET N-CH 200V 250MA TO-92
- Manufacturer：
- ON Semiconductor
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Product Information
- Category
- FETs - Single
- Packaging
- Tube
- Series
- -
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 200V
- Current - Continuous Drain (Id) @ 25°C
- 250mA (Ta)
- Rds On (Max) @ Id, Vgs
- 8 Ohm @ 100mA, 2.8V
- Vgs(th) (Max) @ Id
- 1.5V @ 1mA
- Gate Charge (Qg) @ Vgs
- -
- Input Capacitance (Ciss) @ Vds
- 150pF @ 25V
- Power - Max
- 350mW
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package
- TO-92-3
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