IXFK210N17T
- Description：
- MOSFET N-CH 210A 170V TO-264
- Manufacturer：
- IXYS
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Product Information
- Category
- FETs - Single
- Packaging
- Tube
- Series
- GigaMOS™
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Standard
- Drain to Source Voltage (Vdss)
- 170V
- Current - Continuous Drain (Id) @ 25°C
- 210A (Tc)
- Rds On (Max) @ Id, Vgs
- 7.5 mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id
- 5V @ 4mA
- Gate Charge (Qg) @ Vgs
- 285nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 18800pF @ 25V
- Power - Max
- 1150W
- Mounting Type
- Through Hole
- Package / Case
- TO-264-3, TO-264AA
- Supplier Device Package
- TO-264AA (IXFK)
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