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SIE836DF-T1-GE3

Description:
MOSFET N-CH D-S 200V POLARPAK
Manufacturer:
Vishay Siliconix
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SIE836DF-T1-GE3

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
TrenchFET®
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
200V
Current - Continuous Drain (Id) @ 25°C
18.3A (Tc)
Rds On (Max) @ Id, Vgs
130 mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) @ Vgs
41nC @ 10V
Input Capacitance (Ciss) @ Vds
1200pF @ 100V
Power - Max
104W
Mounting Type
Surface Mount
Package / Case
10-PolarPAK® (SH)
Supplier Device Package
10-PolarPAK® (SH)

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