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FETs - Single
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IRFD213
IRFD213
Description:
MOSFET N-CH 250V 450MA 4-DIP
Manufacturer:
Vishay Siliconix
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IRFD213
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IRFD213
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Product Information
Category
FETs - Single
Packaging
Tape & Reel (TR)
Series
-
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
250V
Current - Continuous Drain (Id) @ 25°C
450mA (Ta)
Rds On (Max) @ Id, Vgs
2 Ohm @ 270mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) @ Vgs
8.2nC @ 10V
Input Capacitance (Ciss) @ Vds
140pF @ 25V
Power - Max
1W
Mounting Type
Through Hole
Package / Case
4-DIP (0.300", 7.62mm)
Supplier Device Package
4-DIP, Hexdip, HVMDIP
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