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2SK3868(Q,M)

Description:
MOSFET N-CH 500V 5A TO220SIS
Manufacturer:
Toshiba Semiconductor and Storage
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2SK3868(Q,M)

Product Information

Category
FETs - Single
Packaging
Bulk
Series
-
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
500V
Current - Continuous Drain (Id) @ 25°C
5A (Ta)
Rds On (Max) @ Id, Vgs
1.7 Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) @ Vgs
16nC @ 10V
Input Capacitance (Ciss) @ Vds
550pF @ 25V
Power - Max
35W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220SIS

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