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PHD9NQ20T,118

Description:
MOSFET N-CH 200V 8.7A DPAK
Manufacturer:
NXP Semiconductors
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PHD9NQ20T,118

Product Information

Category
FETs - Single
Packaging
Tape & Reel (TR)
Series
TrenchMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
200V
Current - Continuous Drain (Id) @ 25°C
8.7A (Tc)
Rds On (Max) @ Id, Vgs
400 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) @ Vgs
24nC @ 10V
Input Capacitance (Ciss) @ Vds
959pF @ 25V
Power - Max
88W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
DPAK

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