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PSMN165-200K,518

Description:
MOSFET N-CH 200V 2.9A SOT96-1
Manufacturer:
NXP Semiconductors
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PSMN165-200K,518

Product Information

Category
FETs - Single
Packaging
Tape & Reel (TR)
Series
TrenchMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
200V
Current - Continuous Drain (Id) @ 25°C
2.9A (Ta)
Rds On (Max) @ Id, Vgs
165 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) @ Vgs
40nC @ 10V
Input Capacitance (Ciss) @ Vds
1330pF @ 25V
Power - Max
3.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO

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